BSP317P L6327

BSP 317 P SIPMOS Small-Signal-Transistor Feature Product Summary • P-Channel VDS • Enhancement mode R DS(on) • Logic Level ID • dv/dt rated -250 V 4 Ω -0.43 A PG-SOT-223 Drain pin 2/4 4 Gate pin1 3 Source pin 3 Type Package BSP 317 P P-SOT-223 BSP 317 P PG-SOT-223 2 1 Tape and Reel Information Marking E6327 BSP317P L6327 BSP317P VPS05163 Maximum Ratings, at Tj = 25 °C, unless otherwise specified Parameter Symbol Continuous drain current ID Value Unit A TA=25°C -0.43 TA=70°C -0.34 ID puls -1.72 dv/dt 6 Gate source voltage VGS ±20 V Power dissipation Ptot 1.8 W -55... +150 55/150/56 °C Pulsed drain current TA=25°C Reverse diode dv/dt kV/µs IS =-0.43A, VDS =-200V, di/dt=-200A/µs, Tjmax =150°C TA=25°C Operating and storage temperature Tj , Tstg IEC climatic category; DIN IEC 68-1 Rev.1.3 Page 1 2005-11-23 BSP 317 P Thermal Characteristics Parameter Symbol Values Unit min. typ. max. - 15 25 @ min. footprint - 80 115 @ 6 cm 2 cooling area 1) - 48 70 Characteristics Thermal resistance, junction - soldering point RthJS K/W (Pin 4) SMD version, device on PCB: RthJA Electrical Characteristics, at Tj = 25 °C, unless otherwise specified Symbol Parameter Values Unit min. typ. max. -250 - - -1 -1.5 -2 Static Characteristics Drain-source breakdown voltage V(BR)DSS V VGS =0, ID=-250µA Gate threshold voltage, VGS = VDS VGS(th) ID =-370µA Zero gate voltage drain current µA IDSS VDS =-250V, VGS =0, Tj =25°C - -0.1 -0.2 VDS =-250V, VGS =0, Tj =150°C - -10 -100 IGSS - -10 -100 nA RDS(on) - 3.3 5 Ω RDS(on) - 3 4 Gate-source leakage current VGS =-20V, VDS =0 Drain-source on-state resistance VGS =-4.5V, ID =-0.39A Drain-source on-state resistance VGS =-10V, ID =-0.43A 1Device on 40mm*40mm*1.5mm epoxy PCB FR4 with 6cm² (one layer, 70 µm thick) copper area for drain connection. PCB is vertical without blown air. Rev.1.3 Page 2 2005-11-23 BSP 317 P Electrical Characteristics, at Tj = 25 °C, unless otherwise specified Parameter Symbol Conditions Values Unit min. typ. max. 0.38 0.76 - S pF Dynamic Characteristics Transconductance gfs |VDS|≥2*|ID |*RDS(on)max , ID =-0.34A Input capacitance Ciss VGS =0, VDS =-25V, - 210 262 Output capacitance Coss f=1MHz - 30 37 Reverse transfer capacitance Crss - 13.4 16.7 Turn-on delay time td(on) VDD =-30V, VGS=-10V, - 5.7 8.5 Rise time tr ID =-0.43A, RG =6Ω - 11.1 16.6 Turn-off delay time td(off) - 254 381 Fall time tf - 67 100 - -0.5 - -4 -5.2 - -11.6 -15.1 V(plateau) VDD =-200V, ID=-0.43A - -2.8 - IS - - -0.43 A - - -1.72 ns Gate Charge Characteristics Gate to source charge Qgs Gate to drain charge Qgd Gate charge total Qg VDD =-200V, ID=-0.43A VDD =-200V, ID=-0.43A, -0.65 nC VGS =0 to -10V Gate plateau voltage V Reverse Diode Inverse diode continuous TA=25°C forward current Inv. diode direct current, pulsed ISM Inverse diode forward voltage VSD Reverse recovery time trr VGS =0, IF =-0.43A - -0.84 -1.2 V VR =-125V, IF =lS , - 92 138 ns Reverse recovery charge diF /dt=100A/µs - 210 315 nC Rev.1.3 Qrr Page 3 2005-11-23 BSP 317 P 1 Power dissipation 2 Drain current Ptot = f (TA ) ID = f (TA ) parameter: |VGS | ≥ 10V 1.9 BSP 317 P -0.5 W BSP 317 P A 1.6 -0.4 1.4 1.2 ID Ptot -0.35 1 -0.3 -0.25 0.8 -0.2 0.6 -0.15 0.4 -0.1 0.2 -0.05 0 0 20 40 60 80 100 °C 120 0 0 160 20 40 60 80 100 120 TA 160 TA 3 Safe operating area 4 Transient thermal impedance ID = f ( VDS ) ZthJA = f (tp ) parameter : D = 0 , TA = 25°C parameter : D = tp /T -10 °C 1 BSP 317 P 10 2 BSP 317 P K/W A tp = 140.0µs 10 1 /I Z thJA D -10 0 on ) = V ID DS 1 ms DS ( 10 ms 10 -1 R -10 -1 10 0 D = 0.50 0.20 10 -2 0.10 0.05 -10 -2 0.02 DC -10 -3 -1 -10 -10 0 -10 1 -10 2 10 -3 V -10 3 VDS Rev.1.3 10 -4 -7 10 0.01 single pulse 10 -6 10 -5 10 -4 10 -3 10 -2 s 10 0 tp Page 4 2005-11-23 BSP 317 P 5 Typ. output characteristic 6 Typ. drain-source on resistance ID = f (VDS ) RDS(on) = f (ID ) parameter: Tj =25°C, -VGS parameter: VGS ; Tj =25°C, -VGS 10 10V A 5V 4.4V 3.6V 3.2V 1.2 2.8V 2.4V 1 2.2V Ω 2.2V 2.4V 2.8V 3.2V 3.6V 4.4V 5V 10V 8 RDS(on) -I D 1.6 7 6 5 0.8 4 0.6 3 0.4 2 0.2 0 0 1 0.5 1 1.5 2 2.5 3 3.5 4 0 0 5 V 0.2 0.4 0.6 0.8 1 1.2 A 1.6 -ID -VDS 7 Typ. transfer characteristics 8 Typ. forward transconductance ID= f ( VGS ); |VDS|≥ 2 x |ID | x RDS(on)max gfs = f(ID) parameter: Tj = 25 °C parameter: Tj =25°C 1.6 1.4 S A 1.2 1.1 1.2 g fs -I D 1 1 0.9 0.8 0.8 0.7 0.6 0.6 0.5 0.4 0.4 0.3 0.2 0.2 0.1 0 0 0.4 0.8 1.2 1.6 2 2.4 2.8 V 3.6 0.2 0.4 0.6 0.8 1 1.2 A 1.6 -ID -VGS Rev.1.3 0 0 Page 5 2005-11-23 BSP 317 P 9 Drain-source on-state resistance 10 Typ. gate threshold voltage RDS(on) = f (Tj ) VGS(th) = f (Tj) parameter : ID = -0.43 A, VGS = -10 V parameter: VGS = VDS 11 BSP 317 P 2.4 Ω V 98% 2 VGS(th) RDS(on) 9 8 7 1.8 typ. 1.6 1.4 6 1.2 5 98% 2% 1 4 0.8 typ 3 0.6 2 0.4 1 0.2 0 -60 -20 20 60 100 °C 0 -60 180 -20 20 60 100 Tj °C 160 Tj 11 Typ. capacitances 12 Forward character. of reverse diode C = f (VDS) IF = f (VSD ) parameter: VGS =0, f=1 MHz, Tj = 25°C parameter: Tj 10 3 -10 1 pF BSP 317 P A Ciss IF -10 0 C 10 2 Coss Crss 10 1 -10 -1 Tj = 25 °C typ Tj = 150 °C typ Tj = 25 °C (98%) Tj = 150 °C (98%) 10 0 0 4 8 12 16 20 24 28 V 36 -VDS Rev.1.3 -10 -2 0 -0.4 -0.8 -1.2 -1.6 -2 -2.4 V -3 VSD Page 6 2005-11-23 BSP 317 P 13 Typ. gate charge 14 Drain-source breakdown voltage VGS = f (QGate) V(BR)DSS = f (Tj ) parameter: ID = -0.43 A pulsed, Tj = 25°C -16 BSP 317 P BSP 317 P -300 V V(BR)DSS V VGS -12 -10 -285 -280 -275 -270 -265 -8 -260 -255 -6 -250 -4 -2 20% -245 50% -240 80% -235 -230 0 0 2 4 6 8 10 12 14 nC 18 |Q G| Rev.1.3 -225 -60 -20 20 60 100 °C 180 Tj Page 7 2005-11-23 BSP 317 P Published by Infineon Technologies AG, Bereichs Kommunikation St.-Martin-Strasse 53, D-81541 München © Infineon Technologies AG 1999 All Rights Reserved. Attention please! The information herein is given to describe certain components and shall not be considered as warranted characteristics. Terms of delivery and rights to technical change reserved. We hereby disclaim any and all warranties, including but not limited to warranties of non-infringement, regarding circuits, descriptions and charts stated herein. Infineon Technologies is an approved CECC manufacturer. Information For further information on technology, delivery terms and conditions and prices please contact your nearest Infineon Technologies Office in Germany or our Infineon Technologies Reprensatives worldwide (see address list). Warnings Due to technical requirements components may contain dangerous substances. For information on the types in question please contact your nearest Infineon Technologies Office. Infineon Technologies Components may only be used in life-support devices or systems with the express written approval of Infineon Technologies, if a failure of such components can reasonably be expected to cause the failure of that life-support device or system, or to affect the safety or effectiveness of that device or system Life support devices or systems are intended to be implanted in the human body, or to support and/or maintain and sustain and/or protect human life. If they fail, it is reasonable to assume that the health of the user or other persons may be endangered. Rev.1.3 Page 8 2005-11-23